Investigation of CsPbBr3: DC Electrical Properties, Complex Impedance Study, and Optoelectronic Behavior
Abstract
CsPbBr₃ perovskite was investigated for its structural, optical, electrical, dielectric, and optoelectronic properties. X-ray diffraction confirmed nthe orthorhombic crystal structure, while FESEM analysis revealed well-defined cubic microstructures. ED-XRF measurements verified the presence of Cs, Pb, and Br elements. Optical studies showed a direct band gap of 2.19 eV and a strong photoluminescence emission at 554 nm. Dielectric properties exhibited frequency- and temperature-dependent behavior, with AC conductivity following Jonscher’s power law and DC conductivity obeying Arrhenius behavior with an activation energy of 0.517 eV. Impedance analysis confirmed semiconducting characteristics through negative temperature coefficient resistance (NTCR) behavior. Under 100 mW cm⁻² illumination, the material demonstrated a tenfold increase in photocurrent, with responsivity and detectivity reaching 1.73 mA W⁻¹ and 3.27 × 10⁴ Jones, respectively. Furthermore, reduced grain and grain-boundary resistance under illumination indicated enhanced charge-carrier transport. These results highlight the potential of CsPbBr₃ as a promising material for photodetectors and other optoelectronic applications.
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